Title: Optimising silicon/silicon-germanium quantum dot qubits

Abstract: Silicon/silicon-germanium (Si/SiGe) quantum well heterostructures comprise a leading materials system for hosting semiconducting quantum dot qubits.   Compared to the silicon metal-oxide-semiconductor materials stack used in most current classical computers, Si/SiGe has the advantage that the qubits are confined near a high-quality epitaxial interface that is relatively far from defects that can degrade performance.  This talk will present our recent theoretical work that demonstrates that qubits in Si/SiGe heterostructures are affected strongly by compositional disorder in the SiGe, and discusses how this understanding can be exploited to optimise quantum dot qubits in Si/SiGe.